Insulated-gate bipolar transistor
Type of solid state switch
Insulated-gate bipolar transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs) for motor control in trains, electric cars, and variable-speed refrigerators and air conditioners, as well as lamp ballasts, arc-welding machines, photovoltaic and hybrid inverters, uninterruptible power supply systems (UPS), and induction stoves. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with...
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