Aluminium nitride
Nitride of aluminum
Aluminium nitride
Aluminium nitride (AlN) is a solid nitride of aluminium, which was first synthesized in 1862 by F. Briegleb and A. Geuther. AlN is a wide-bandgap semiconductor composed of aluminium and nitrogen. It crystallizes predominantly in the wurtzite structure and exhibits a direct band gap of approximately 6 eV at room temperature. The exceptionally wide bandgap enables applications in deep-ultraviolet optoelectronics, while the material's thermal conductivity 321 W/(m·K), and strong polarization effects make it an important buffer and template material for III-nitride quantum heterostructures used in high-power and high-frequency electronic devices.
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