7 nm process

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In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems (IRDS), which was preceded by the International Technology Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021, the IRDS Lithography standard gives a table of dimensions for the "7 nm" node, with examples given below: The 2021 IRDS Lithography standard is a retrospective document, as the first volume production of a "7 nm" branded process was in 2016 with Taiwan Semiconductor Manufacturing Company's (TSMC) production of 256Mbit SRAM memory chips using a "7nm" process called N7. Samsung started mass production of their "7nm" process (7LPP) devices in 2018. These process nodes had the same approximate transistor density as Intel's "10 nm Enhanced Superfin" node, later rebranded "Intel 7." Since at least 1997, the...

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