MOSFET

Rare card · No. 33269

In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET). Physicist Julius Edgar Lilienfeld first proposed the concept of a field-effect transistor (FET) in 1925, but it was not possible to construct a working device at that time. The first working metal–oxide–semiconductor field-effect transistor (MOSFET) was invented in 1959 by engineers Mohamed Atalla and Dawon Kahng at Bell Labs. Their breakthrough—fabricating a practical field...

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