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3 nm process
Semiconductor manufacturing process
3 nm process
In semiconductor manufacturing, the "3 nm process" is the next die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. South Korean chipmaker Samsung started shipping its "3 nm" gate all around (GAA) process, named 3GAA, in mid-2022. On 29 December 2022, Taiwanese chip manufacturer TSMC announced that volume production using its "3 nm" semiconductor node (N3) was underway with good yields. An enhanced "3 nm" chip process called "N3E" may have started production in 2023. American manufacturer Intel planned to start "3 nm" production in 2023. Samsung's "3 nm" process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process still uses FinFET (fin field-effect transistor) technology, despite TSMC developing GAAFET transistors. Specifically, Samsung planned to use its own variant of GAAFET called MBCFET (multi-bridge channel field-effect transistor). Intel's process...
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