14 nm process

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The 14 nanometer process is a marketing term for the MOSFET technology node that is the successor to the 22 nm (or 20 nm) node. The 14 nm was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following 22 nm was expected to be 16 nm. All 14 nm nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Since at least 1997, process nodes have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a 14nm device is fourteen nanometers. For example, TSMC and Samsung's 10 nm processes are somewhere between Intel's 14 nm and 10 nm processes in transistor density, and TSMC's 7 nm processes are dimensionally similar to Intel's 10 nm process. Samsung Electronics taped out a 14 nm chip in 2014, before manufacturing 10 nm class NAND flash chips...

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