Tunnel magnetoresistance

Common card · No. 405736

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum-mechanical phenomenon and lies in the study of spintronics. Magnetic tunnel junctions are manufactured in thin-film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular-beam epitaxy, pulsed laser deposition and electron-beam physical vapor deposition are also utilized. The junctions are prepared by photolithography.

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